dc.contributor.author |
Parish, G
|
|
dc.contributor.author |
Musca, CA
|
|
dc.contributor.author |
Siliquini, JF
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|
dc.contributor.author |
Antoszewki, J
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dc.contributor.author |
Dell, Jm
|
|
dc.contributor.author |
Nener, BD
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|
dc.contributor.author |
Faraone, L
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|
dc.contributor.author |
Gouws, GJ
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|
dc.date.accessioned |
2007-06-12T07:34:18Z |
|
dc.date.available |
2007-06-12T07:34:18Z |
|
dc.date.issued |
1997-07 |
|
dc.identifier.citation |
Parish, G, et al. 1997. Monolithic dual-band HgCdTe infrared detector structure. IEEE Electron Device Letters, vol. 18(7), pp 352-354 |
en |
dc.identifier.issn |
0741-3106 |
|
dc.identifier.uri |
http://hdl.handle.net/10204/546
|
|
dc.description |
Copyright: 1997 IEEE-Institute of Electrical and Electronics Engineers |
en |
dc.description.abstract |
A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. |
en |
dc.language.iso |
en |
en |
dc.publisher |
IEEE-Institute of Electrical and Electronics Engineers |
en |
dc.subject |
Device structures |
en |
dc.subject |
HgCdTe detector structure |
en |
dc.subject |
Infrared bands |
en |
dc.subject |
Crosstalk |
en |
dc.subject |
Atmospheric transmission windows |
en |
dc.subject |
Electronic engineering |
en |
dc.title |
Monolithic dual-band HgCdTe infrared detector structure |
en |
dc.type |
Article |
en |
dc.identifier.apacitation |
Parish, G., Musca, C., Siliquini, J., Antoszewki, J., Dell, J., Nener, B., ... Gouws, G. (1997). Monolithic dual-band HgCdTe infrared detector structure. http://hdl.handle.net/10204/546 |
en_ZA |
dc.identifier.chicagocitation |
Parish, G, CA Musca, JF Siliquini, J Antoszewki, Jm Dell, BD Nener, L Faraone, and GJ Gouws "Monolithic dual-band HgCdTe infrared detector structure." (1997) http://hdl.handle.net/10204/546 |
en_ZA |
dc.identifier.vancouvercitation |
Parish G, Musca C, Siliquini J, Antoszewki J, Dell J, Nener B, et al. Monolithic dual-band HgCdTe infrared detector structure. 1997; http://hdl.handle.net/10204/546. |
en_ZA |
dc.identifier.ris |
TY - Article
AU - Parish, G
AU - Musca, CA
AU - Siliquini, JF
AU - Antoszewki, J
AU - Dell, Jm
AU - Nener, BD
AU - Faraone, L
AU - Gouws, GJ
AB - A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m.
DA - 1997-07
DB - ResearchSpace
DP - CSIR
KW - Device structures
KW - HgCdTe detector structure
KW - Infrared bands
KW - Crosstalk
KW - Atmospheric transmission windows
KW - Electronic engineering
LK - https://researchspace.csir.co.za
PY - 1997
SM - 0741-3106
T1 - Monolithic dual-band HgCdTe infrared detector structure
TI - Monolithic dual-band HgCdTe infrared detector structure
UR - http://hdl.handle.net/10204/546
ER -
|
en_ZA |