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Monolithic dual-band HgCdTe infrared detector structure

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dc.contributor.author Parish, G
dc.contributor.author Musca, CA
dc.contributor.author Siliquini, JF
dc.contributor.author Antoszewki, J
dc.contributor.author Dell, Jm
dc.contributor.author Nener, BD
dc.contributor.author Faraone, L
dc.contributor.author Gouws, GJ
dc.date.accessioned 2007-06-12T07:34:18Z
dc.date.available 2007-06-12T07:34:18Z
dc.date.issued 1997-07
dc.identifier.citation Parish, G, et al. 1997. Monolithic dual-band HgCdTe infrared detector structure. IEEE Electron Device Letters, vol. 18(7), pp 352-354 en
dc.identifier.issn 0741-3106
dc.identifier.uri http://hdl.handle.net/10204/546
dc.description Copyright: 1997 IEEE-Institute of Electrical and Electronics Engineers en
dc.description.abstract A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. en
dc.language.iso en en
dc.publisher IEEE-Institute of Electrical and Electronics Engineers en
dc.subject Device structures en
dc.subject HgCdTe detector structure en
dc.subject Infrared bands en
dc.subject Crosstalk en
dc.subject Atmospheric transmission windows en
dc.subject Electronic engineering en
dc.title Monolithic dual-band HgCdTe infrared detector structure en
dc.type Article en
dc.identifier.apacitation Parish, G., Musca, C., Siliquini, J., Antoszewki, J., Dell, J., Nener, B., ... Gouws, G. (1997). Monolithic dual-band HgCdTe infrared detector structure. http://hdl.handle.net/10204/546 en_ZA
dc.identifier.chicagocitation Parish, G, CA Musca, JF Siliquini, J Antoszewki, Jm Dell, BD Nener, L Faraone, and GJ Gouws "Monolithic dual-band HgCdTe infrared detector structure." (1997) http://hdl.handle.net/10204/546 en_ZA
dc.identifier.vancouvercitation Parish G, Musca C, Siliquini J, Antoszewki J, Dell J, Nener B, et al. Monolithic dual-band HgCdTe infrared detector structure. 1997; http://hdl.handle.net/10204/546. en_ZA
dc.identifier.ris TY - Article AU - Parish, G AU - Musca, CA AU - Siliquini, JF AU - Antoszewki, J AU - Dell, Jm AU - Nener, BD AU - Faraone, L AU - Gouws, GJ AB - A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. DA - 1997-07 DB - ResearchSpace DP - CSIR KW - Device structures KW - HgCdTe detector structure KW - Infrared bands KW - Crosstalk KW - Atmospheric transmission windows KW - Electronic engineering LK - https://researchspace.csir.co.za PY - 1997 SM - 0741-3106 T1 - Monolithic dual-band HgCdTe infrared detector structure TI - Monolithic dual-band HgCdTe infrared detector structure UR - http://hdl.handle.net/10204/546 ER - en_ZA


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