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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/546

Title: Monolithic dual-band HgCdTe infrared detector structure
Authors: Parish, G
Musca, CA
Siliquini, JF
Antoszewki, J
Dell, Jm
Nener, BD
Faraone, L
Gouws, GJ
Keywords: Device structures
HgCdTe detector structure
Infrared bands
Crosstalk
Atmospheric transmission windows
Electronic engineering
Issue Date: Jul-1997
Publisher: IEEE-Institute of Electrical and Electronics Engineers
Citation: Parish, G, et al. 1997. Monolithic dual-band HgCdTe infrared detector structure. IEEE Electron Device Letters, vol. 18(7), pp 352-354
Abstract: A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m.
Description: Copyright: 1997 IEEE-Institute of Electrical and Electronics Engineers
URI: http://hdl.handle.net/10204/546
ISSN: 0741-3106
Appears in Collections:Sensor science and technology
General science, engineering & technology

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