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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10204/828
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| Title: | Electrical properties of undoped and doped MOVPE-grown InAsSb |
| Authors: | Krug, T
Botha, L
Shamba, P
Baisitse, TR
Venter, A
Engelbrecht, JAA
Botha, JR |
| Keywords: | Hall measurements
Surface morphology
Analysis methods
Two-layer models |
| Issue Date: | 2006 |
| Publisher: | Elsevier Science BV |
| Citation: | Krug, T, et al. 2006. Electrical properties of undoped and doped MOVPE-grown InAsSb. Journal of Crystal Growth, vol. 298, pp 163-167 |
| Abstract: | Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at very low doping concentrations. A two-layer model is presented which can potentially be used to extract the bulk layer properties of a semiconductor epilayer. We here apply this model to two different materials, InAs and InAsSb, and extract their transport properties. |
| Description: | Copyright: 2006 Elsevier Science BV |
| URI: | http://hdl.handle.net/10204/828 |
| ISSN: | 0022-0248 |
| Appears in Collections: | Laser physics and technology
General science, engineering & technology
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