Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at very low doping concentrations. A two-layer model is presented which can potentially be used to extract the bulk layer properties of a semiconductor epilayer. We here apply this model to two different materials, InAs and InAsSb, and extract their transport properties.
Reference:
Krug, T, et al. 2006. Electrical properties of undoped and doped MOVPE-grown InAsSb. Journal of Crystal Growth, vol. 298, pp 163-167
Krug, T., Botha, L., Shamba, P., Baisitse, T., Venter, A., Engelbrecht, J., & Botha, J. (2006). Electrical properties of undoped and doped MOVPE-grown InAsSb. http://hdl.handle.net/10204/828
Krug, T, L Botha, P Shamba, TR Baisitse, A Venter, JAA Engelbrecht, and JR Botha "Electrical properties of undoped and doped MOVPE-grown InAsSb." (2006) http://hdl.handle.net/10204/828
Krug T, Botha L, Shamba P, Baisitse T, Venter A, Engelbrecht J, et al. Electrical properties of undoped and doped MOVPE-grown InAsSb. 2006; http://hdl.handle.net/10204/828.
