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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/828

Title: Electrical properties of undoped and doped MOVPE-grown InAsSb
Authors: Krug, T
Botha, L
Shamba, P
Baisitse, TR
Venter, A
Engelbrecht, JAA
Botha, JR
Keywords: Hall measurements
Surface morphology
Analysis methods
Two-layer models
Issue Date: 2006
Publisher: Elsevier Science BV
Citation: Krug, T, et al. 2006. Electrical properties of undoped and doped MOVPE-grown InAsSb. Journal of Crystal Growth, vol. 298, pp 163-167
Abstract: Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at very low doping concentrations. A two-layer model is presented which can potentially be used to extract the bulk layer properties of a semiconductor epilayer. We here apply this model to two different materials, InAs and InAsSb, and extract their transport properties.
Description: Copyright: 2006 Elsevier Science BV
URI: http://hdl.handle.net/10204/828
ISSN: 0022-0248
Appears in Collections:Laser physics and technology
General science, engineering & technology

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