Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF etching of the SiO(sub2)/Si substrate. When such substrates are overlaid with a thin film of Au, the nanowires obtained are found to be pure SiO(sub2). The Au layer disappears as vapour of AuCl(sub3) as its melting point is at 298 degrees C. Proposed mechanisms of growth in all the various scenarios are identified to be governed by self-catalyzed vapour–solid (VS) mechanism.
Reference:
Thabethe, S, Arendse, C.J and Mwakikunga, B.W. 2014. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. Journal of Alloys and Compounds, vol.616, pp 221–226
Thabethe, S., Arendse, C., & Mwakikunga, B. W. (2014). Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. http://hdl.handle.net/10204/7814
Thabethe, S, CJ Arendse, and Bonex W Mwakikunga "Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires." (2014) http://hdl.handle.net/10204/7814
Thabethe S, Arendse C, Mwakikunga BW. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. 2014; http://hdl.handle.net/10204/7814.
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