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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/5522

Title: Growth kinetics of nc-Si:H deposited at 200 °C by hot-wire chemical vapour deposition
Authors: Oliphant, CJ
Arendse, CJ
Knoesen, D
Muller, TFG
Prins, S
Malgas, GF
Keywords: Nanocrystalline silicon
Kinetics
Crystallinity
Strain
Chemical vapour deposition
Chemistry
Nanotechnology
Issue Date: May-2011
Publisher: Elsevier
Citation: Oliphant, CJ, Arendse, CJ, Knoesen, D et al. 2011. Growth kinetics of nc-Si:H deposited at 200 °C by hot-wire chemical vapour deposition. Thin Solid Films, Vol 519(14), pp 4437–4441
Series/Report no.: Workflow request;7962
Abstract: The authors report on the growth kinetics of hydrogenated nanocrystalline silicon, with specific focus on the effects of the deposition time and hydrogen dilution on the nano-structural properties. The growth in the crystallite size, attributed to the agglomeration of smaller nano-crystallites, is accompanied by a reduction in the compressive strain within the crystalline region and an improved ordering and reduction in the tensile stress in the amorphous network. These changes are intimately related to the absorption characteristics of the material. Surface diffusion determines the growth in the amorphous regime, whereas competing reactions between silicon etching by atomic hydrogen and precursor deposition govern the film growth at the highdilution regime. The diffusion of hydrogen within the film controls the growth during the transition from amorphous to nanocrystalline silicon.
Description: Copyright: 2011 Elsevier. This is the Pre print version of the work. The definitive version is published in Thin Solid Films, Vol 519(14), pp 4437–4441
URI: http://www.sciencedirect.com/science/article/pii/S0040609011003889
http://hdl.handle.net/10204/5522
ISSN: 0040-6090
Appears in Collections:Nanotechnology
General science, engineering & technology

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