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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/3742

Title: Effect of mixture ratios and nitrogen carrier gas flow rates on the morphology of carbon nanotube structures grown by CVD
Authors: Malgas, GF
Arendse, CJ
Cele, NP
Cummings, FR
Keywords: Carbon nanotubes
Chemical vapor deposition
CVD
Nitrogen carrier gas flow
Scanning electron microscopy
Mixture ratios
Materials science
Raman spectroscopy
Issue Date: Feb-2008
Publisher: Springer - Verlag
Citation: Malgas, GF, Arendse, CJ, Cele, NP and Cummings, FR. 2008. Effect of mixture ratios and nitrogen carrier gas flow rates on the morphology of carbon nanotube structures grown by CVD. Journal of Materials Science, Vol. 43(3), pp 1020-1025
Abstract: This paper reports on the growth of carbon nanotubes (CNTs) by thermal Chemical Vapour Deposition (CVD) and investigates the effects of nitrogen carrier gas flow rates and mixture ratios on the morphology of CNTs on a silicon substrate by vaporizing the camphor/ferrocene mixture at 750 C in a nitrogen atmosphere. Carbon layers obtained after each CVD growth run of 15 min are characterized by scanning electron microscopy (SEM) and Raman spectroscopy. Growth of CNTs is found to occur on silicon substrates. The SEM micrographs helped better understand the nanotube growth morphology while Raman spectroscopy was used to detect the presence of nanotubes and also identify their nature vizely semiconducting or metallic, single-walled or multi-walled. Raman Spectra was also useful to estimate the quality of the samples as a ratio of nanotube to non-nanotube content. The length and diameters of the aligned CNTs were found to depend on the pyrolysis temperatures, mixture ratio, and the nitrogen carrier gas flow rates.
Description: Copyright: 2008 Springer-Verlag. This is the author's version of the work. It is posted here by permission of Springer-Verlag for your personal use. Not for redistribution. The definitive version was published in the Journal of Materials Science, Vol. 43(3), pp 1020-1025
URI: http://hdl.handle.net/10204/3742
ISSN: 0022-2461
Appears in Collections:Nanotechnology
General science, engineering & technology

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