The material properties of hydrogenated amorphous silicon (a-Si:H) have been known to change when exposed to elevated temperatures. In this work researchers report on the thermal stability of the optical band gap and structural disorder in hot-wire deposited a-Si:H with different hydrogen concentrations. Furthermore, the changes in the structural disorder will be correlated with the changes in the optical band gap. Raman spectroscopy shows evidence that no crystallization is induced at 450 °C and that the structural disorder increases upon annealing. The increase in the structural disorder results in a broadening of the valence and conduction band tails, thereby pinning the valence and conduction band edges closer together, resulting in a decrease in the optical band gap as probed by optical reflection and transmission measurements.
Reference:
Arendse, CJ, Malgas, G, Oliphant, CJ et al. 2009. Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon. Journal of Materials Science, Vol. 44(23), pp 6333-6337
Arendse, C., Malgas, G., Oliphant, C., Muller, T., & Knoesen, D. (2009). Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon. http://hdl.handle.net/10204/3729
Arendse, CJ, G Malgas, CJ Oliphant, TFG Muller, and D Knoesen "Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon." (2009) http://hdl.handle.net/10204/3729
Arendse C, Malgas G, Oliphant C, Muller T, Knoesen D. Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon. 2009; http://hdl.handle.net/10204/3729.
Copyright: 2009 Springer-Verlag. This is the author's version of the work. It is posted here by permission of Springer-Verlag for your personal use. Not for redistribution. The definitive version was published in the Journal of Materials Science, Vol. 44(23), pp 6333-6337
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