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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/3729

Title: Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon
Authors: Arendse, CJ
Malgas, G
Oliphant, CJ
Muller, TFG
Knoesen, D
Keywords: Thermal stability
Optical band gap
Amorphous silicon
Structural order
Raman spectroscopy
Hot-wire CVD
Crystallization
Materials science
Issue Date: 2009
Publisher: Springer - Verlag
Citation: Arendse, CJ, Malgas, G, Oliphant, CJ et al. 2009. Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon. Journal of Materials Science, Vol. 44(23), pp 6333-6337
Abstract: The material properties of hydrogenated amorphous silicon (a-Si:H) have been known to change when exposed to elevated temperatures. In this work researchers report on the thermal stability of the optical band gap and structural disorder in hot-wire deposited a-Si:H with different hydrogen concentrations. Furthermore, the changes in the structural disorder will be correlated with the changes in the optical band gap. Raman spectroscopy shows evidence that no crystallization is induced at 450 °C and that the structural disorder increases upon annealing. The increase in the structural disorder results in a broadening of the valence and conduction band tails, thereby pinning the valence and conduction band edges closer together, resulting in a decrease in the optical band gap as probed by optical reflection and transmission measurements.
Description: Copyright: 2009 Springer-Verlag. This is the author's version of the work. It is posted here by permission of Springer-Verlag for your personal use. Not for redistribution. The definitive version was published in the Journal of Materials Science, Vol. 44(23), pp 6333-6337
URI: http://www.springerlink.com/content/x570g3422040072x/
http://hdl.handle.net/10204/3729
ISSN: 0022-2461
Appears in Collections:Nanotechnology
General science, engineering & technology

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