Author:Gouws, GJ; Muller, RJ; Bowden, RSDate:May 1993The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of (100) GaAs/ (lll) CdTe was found to be unsuitable due ...Read more
Author:Parish, G; Musca, CA; Siliquini, JF; Antoszewki, J; Dell, Jm; Nener, BD; Faraone, L; Gouws, GJDate:Jul 1997A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the ...Read more