Valdes, MModibedi, Remegia MMathe, Mahlanyane KHillie, TVazquez, M2014-07-302014-07-302014-05Valdes, M, Modibedi, M, Mathe, M, Hillie, T and Vazquez, M. 2014. Electrodeposited Cu2ZnSnS4 thin films. Electrochimica Acta, vol. 128, pp 393-3990013-4686http://ac.els-cdn.com/S0013468613021786/1-s2.0-S0013468613021786-main.pdf?_tid=97a2e922-13fc-11e4-8170-00000aab0f02&acdnat=1406293812_175203ef2a9d477971bfada90510f35bhttp://hdl.handle.net/10204/7536https://www.sciencedirect.com/science/article/pii/S0013468613021786https://doi.org/10.1016/j.electacta.2013.10.206Copyright: 2014 Elsevier. This is an ABSTRACT ONLY. The definitive version is published in Electrochimica Acta, vol. 128, pp 393-399Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic voltammetry (CV). Then, based on CVs results, CZTS films were grownemploying EC-ALD deposition cycles using the sequence Au/S/Cu/S/Zn/S/Sn/S to form the desired qua-ternary compound. In parallel, conventional one-step electrodeposition was carried out at -0.85 V vs.Ag/AgCl over 1 hour. A thermal treatment in sulfur vapor was also investigated in an attempt to optimizethe stoichiometry. The crystal structure of the films was characterized by XRD and micro Raman spectroscopy, while themorphology, thickness, topography and elemental composition were investigated using FIB-SEM and EDS.enElectrodepositionSemiconductorsThin filmsCu2ZnSnS4CZTSArticleValdes, M., Modibedi, R. M., Mathe, M. K., Hillie, T., & Vazquez, M. (2014). Electrodeposited Cu2ZnSnS4 thin films. http://hdl.handle.net/10204/7536Valdes, M, Remegia M Modibedi, Mahlanyane K Mathe, T Hillie, and M Vazquez "Electrodeposited Cu2ZnSnS4 thin films." (2014) http://hdl.handle.net/10204/7536Valdes M, Modibedi RM, Mathe MK, Hillie T, Vazquez M. Electrodeposited Cu2ZnSnS4 thin films. 2014; http://hdl.handle.net/10204/7536.TY - Article AU - Valdes, M AU - Modibedi, Remegia M AU - Mathe, Mahlanyane K AU - Hillie, T AU - Vazquez, M AB - Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic voltammetry (CV). Then, based on CVs results, CZTS films were grownemploying EC-ALD deposition cycles using the sequence Au/S/Cu/S/Zn/S/Sn/S to form the desired qua-ternary compound. In parallel, conventional one-step electrodeposition was carried out at -0.85 V vs.Ag/AgCl over 1 hour. A thermal treatment in sulfur vapor was also investigated in an attempt to optimizethe stoichiometry. The crystal structure of the films was characterized by XRD and micro Raman spectroscopy, while themorphology, thickness, topography and elemental composition were investigated using FIB-SEM and EDS. DA - 2014-05 DB - ResearchSpace DP - CSIR KW - Electrodeposition KW - Semiconductors KW - Thin films KW - Cu2ZnSnS4 KW - CZTS LK - https://researchspace.csir.co.za PY - 2014 SM - 0013-4686 T1 - Electrodeposited Cu2ZnSnS4 thin films TI - Electrodeposited Cu2ZnSnS4 thin films UR - http://hdl.handle.net/10204/7536 ER -