Dhonge, BPRay, Suprakas SMwakikunga, Bonex W2018-11-272018-11-272017-04Dhonge, B.P. et al. 2017. Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposure. RSC Advances, vol. 7: 21703-217122046-2069https://pubs.rsc.org/en/content/articlelanding/2017/ra/c7ra00383h#!divAbstractDOI:10.1039/C7RA00383Hhttp://hdl.handle.net/10204/10545Open access article published in RSC Advances, vol. 7: 21703-21712In this paper, we present the first experimental evidence for electronic to protonic conduction switching in p-type semiconducting nanostructured cuprous oxide Cu2O porous films when exposed to humidity. We also present a linear response at low relative humidity (RH < 48%). The Cu2O nanostructured porous films were synthesized by spray pyrolysis of a Cu/Cu2O colloidal solution obtained by laser liquid medium ablation of a Cu target in water. The as-prepared and annealed Cu2O films were extensively characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction analysis, and Raman spectroscopy. The chemiresistor response to RH values from 7.5 to 84% was examined at a temperature of 22 degrees C and a pressure of 760 mmHg. At RH values below 48%, recombination of the majority charge carrier holes and electrons occurred owing to the dissociation of water molecules near the surface; the RH level was used to quantify the increase in resistance response (R(sub)Res). Both devices revealed linear responses to RH (7.5–48%), with a maximum rate of 4.38 (plusminus) 0.16%/RH. As the RH increased beyond 48%, proton hopping between the physisorbed water molecules had a larger effect than the electronic conduction, and the response showed the opposite effect. The response exhibited a linear log-normal relationship with higher RH values (56–84%), with a maximum rate of -0.0694 (plusminus) 0.002 log(%)/RH. The mechanism for switching the resistive response trend of the Cu2O films is discussed.enCu2O nanostructured porous filmsHumidity exposureArticleDhonge, B., Ray, S. S., & Mwakikunga, B. W. (2017). Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposure. http://hdl.handle.net/10204/10545Dhonge, BP, Suprakas S Ray, and Bonex W Mwakikunga "Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposure." (2017) http://hdl.handle.net/10204/10545Dhonge B, Ray SS, Mwakikunga BW. Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposure. 2017; http://hdl.handle.net/10204/10545.TY - Article AU - Dhonge, BP AU - Ray, Suprakas S AU - Mwakikunga, Bonex W AB - In this paper, we present the first experimental evidence for electronic to protonic conduction switching in p-type semiconducting nanostructured cuprous oxide Cu2O porous films when exposed to humidity. We also present a linear response at low relative humidity (RH < 48%). The Cu2O nanostructured porous films were synthesized by spray pyrolysis of a Cu/Cu2O colloidal solution obtained by laser liquid medium ablation of a Cu target in water. The as-prepared and annealed Cu2O films were extensively characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction analysis, and Raman spectroscopy. The chemiresistor response to RH values from 7.5 to 84% was examined at a temperature of 22 degrees C and a pressure of 760 mmHg. At RH values below 48%, recombination of the majority charge carrier holes and electrons occurred owing to the dissociation of water molecules near the surface; the RH level was used to quantify the increase in resistance response (R(sub)Res). Both devices revealed linear responses to RH (7.5–48%), with a maximum rate of 4.38 (plusminus) 0.16%/RH. As the RH increased beyond 48%, proton hopping between the physisorbed water molecules had a larger effect than the electronic conduction, and the response showed the opposite effect. The response exhibited a linear log-normal relationship with higher RH values (56–84%), with a maximum rate of -0.0694 (plusminus) 0.002 log(%)/RH. The mechanism for switching the resistive response trend of the Cu2O films is discussed. DA - 2017-04 DB - ResearchSpace DP - CSIR KW - Cu2O nanostructured porous films KW - Humidity exposure LK - https://researchspace.csir.co.za PY - 2017 SM - 2046-2069 T1 - Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposure TI - Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposure UR - http://hdl.handle.net/10204/10545 ER -