Parish, GMusca, CASiliquini, JFAntoszewki, JDell, JmNener, BDFaraone, LGouws, GJ2007-06-122007-06-121997-07Parish, G, et al. 1997. Monolithic dual-band HgCdTe infrared detector structure. IEEE Electron Device Letters, vol. 18(7), pp 352-3540741-3106http://hdl.handle.net/10204/546Copyright: 1997 IEEE-Institute of Electrical and Electronics EngineersA monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m.enDevice structuresHgCdTe detector structureInfrared bandsCrosstalkAtmospheric transmission windowsElectronic engineeringArticleParish, G., Musca, C., Siliquini, J., Antoszewki, J., Dell, J., Nener, B., ... Gouws, G. (1997). Monolithic dual-band HgCdTe infrared detector structure. http://hdl.handle.net/10204/546Parish, G, CA Musca, JF Siliquini, J Antoszewki, Jm Dell, BD Nener, L Faraone, and GJ Gouws "Monolithic dual-band HgCdTe infrared detector structure." (1997) http://hdl.handle.net/10204/546Parish G, Musca C, Siliquini J, Antoszewki J, Dell J, Nener B, et al. Monolithic dual-band HgCdTe infrared detector structure. 1997; http://hdl.handle.net/10204/546.TY - Article AU - Parish, G AU - Musca, CA AU - Siliquini, JF AU - Antoszewki, J AU - Dell, Jm AU - Nener, BD AU - Faraone, L AU - Gouws, GJ AB - A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths, The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process, The resulting detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. DA - 1997-07 DB - ResearchSpace DP - CSIR KW - Device structures KW - HgCdTe detector structure KW - Infrared bands KW - Crosstalk KW - Atmospheric transmission windows KW - Electronic engineering LK - https://researchspace.csir.co.za PY - 1997 SM - 0741-3106 T1 - Monolithic dual-band HgCdTe infrared detector structure TI - Monolithic dual-band HgCdTe infrared detector structure UR - http://hdl.handle.net/10204/546 ER -