Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

Thabethe, SArendse, CJMwakikunga, Bonex W2014-12-152014-12-152014-12Thabethe, S, Arendse, C.J and Mwakikunga, B.W. 2014. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. Journal of Alloys and Compounds, vol.616, pp 221–2260925-8388http://www.sciencedirect.com/science/article/pii/S092583881401706Xhttp://hdl.handle.net/10204/7814Copyright: 2014 Elsevier. Published in Journal of Alloys and Compounds, vol.616, pp 221–226. Abstract only.Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF etching of the SiO(sub2)/Si substrate. When such substrates are overlaid with a thin film of Au, the nanowires obtained are found to be pure SiO(sub2). The Au layer disappears as vapour of AuCl(sub3) as its melting point is at 298 degrees C. Proposed mechanisms of growth in all the various scenarios are identified to be governed by self-catalyzed vapour–solid (VS) mechanism.enIron–siliconSilicon oxideAmorphous siliconNanowiresVapour transport CVDInfluence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowiresArticleThabethe, S., Arendse, C., & Mwakikunga, B. W. (2014). Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. http://hdl.handle.net/10204/7814Thabethe, S, CJ Arendse, and Bonex W Mwakikunga "Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires." (2014) http://hdl.handle.net/10204/7814Thabethe S, Arendse C, Mwakikunga BW. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires. 2014; http://hdl.handle.net/10204/7814.TY - Article AU - Thabethe, S AU - Arendse, CJ AU - Mwakikunga, Bonex W AB - Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF etching of the SiO(sub2)/Si substrate. When such substrates are overlaid with a thin film of Au, the nanowires obtained are found to be pure SiO(sub2). The Au layer disappears as vapour of AuCl(sub3) as its melting point is at 298 degrees C. Proposed mechanisms of growth in all the various scenarios are identified to be governed by self-catalyzed vapour–solid (VS) mechanism. DA - 2014-12 DB - ResearchSpace DP - CSIR KW - Iron–silicon KW - Silicon oxide KW - Amorphous silicon KW - Nanowires KW - Vapour transport CVD LK - https://researchspace.csir.co.za PY - 2014 SM - 0925-8388 T1 - Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires TI - Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires UR - http://hdl.handle.net/10204/7814 ER -