Akande, Amos ADhonge, BPMwakikunga, Bonex WMachatine, AGJ2018-03-142018-03-142017Akande, A.A. et al. 2017. Gate voltage controlled humidity sensing using MOSFET of VO2 particles. International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering, vol. 11(1): 78-811307-6892https://waset.org/publications/10006366/gate-voltage-controlled-humidity-sensing-using-mosfet-of-vo2-particleshttp://hdl.handle.net/10204/10099Article published in International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering, vol. 11(1): 78-81This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s).enVO2V2O5VO2 (B)MOSFETGate voltageHumidity sensorArticleAkande, A. A., Dhonge, B., Mwakikunga, B. W., & Machatine, A. (2017). Gate voltage controlled humidity sensing using MOSFET of VO2 particles. http://hdl.handle.net/10204/10099Akande, Amos A, BP Dhonge, Bonex W Mwakikunga, and AGJ Machatine "Gate voltage controlled humidity sensing using MOSFET of VO2 particles." (2017) http://hdl.handle.net/10204/10099Akande AA, Dhonge B, Mwakikunga BW, Machatine A. Gate voltage controlled humidity sensing using MOSFET of VO2 particles. 2017; http://hdl.handle.net/10204/10099.TY - Article AU - Akande, Amos A AU - Dhonge, BP AU - Mwakikunga, Bonex W AU - Machatine, AGJ AB - This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s). DA - 2017 DB - ResearchSpace DP - CSIR KW - VO2 KW - V2O5 KW - VO2 (B) KW - MOSFET KW - Gate voltage KW - Humidity sensor LK - https://researchspace.csir.co.za PY - 2017 SM - 1307-6892 T1 - Gate voltage controlled humidity sensing using MOSFET of VO2 particles TI - Gate voltage controlled humidity sensing using MOSFET of VO2 particles UR - http://hdl.handle.net/10204/10099 ER -