Mathe, Mahlanyane KCox, SMVenkatasamy, VHappek, UStickney, JL2007-08-232007-08-232005-09Mathe, MK et al. 2005. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. Journal of the Electrochemical society, Vol 152(11), pp C751-C7550013-4651http://hdl.handle.net/10204/1153Copyright: 2005 Electrochemical SocietyThe growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation of an atomic layer of an element, under controlled potential. HgSe thin films were formed on gold substrates using two reactant solutions: a solution of Hg2+ complexed with ethylenediaminetetraacetic acid and a HSeO3 ion solution. X-ray diffraction analysis showed a zinc blende structure for the deposits, with a strong (111) preferred texture, and an average grain size of 425 delta. Electron probe microscope analysis showed near-stoichiometric deposits. Fourier transform infrared spectroscopy reflection absorption measurements suggest two bandgaps: 0.42 and 0.88 eV.enElectrochemical atomic layer epitaxyHgSe thin filmsEthylenediaminetetraacetic acidX-ray diffraction analysisStoichiometric depositsArticleMathe, M. K., Cox, S., Venkatasamy, V., Happek, U., & Stickney, J. (2005). Formation of HgSe thin films using electrochemical atomic Layer epitaxy. http://hdl.handle.net/10204/1153Mathe, Mahlanyane K, SM Cox, V Venkatasamy, U Happek, and JL Stickney "Formation of HgSe thin films using electrochemical atomic Layer epitaxy." (2005) http://hdl.handle.net/10204/1153Mathe MK, Cox S, Venkatasamy V, Happek U, Stickney J. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. 2005; http://hdl.handle.net/10204/1153.TY - Article AU - Mathe, Mahlanyane K AU - Cox, SM AU - Venkatasamy, V AU - Happek, U AU - Stickney, JL AB - The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation of an atomic layer of an element, under controlled potential. HgSe thin films were formed on gold substrates using two reactant solutions: a solution of Hg2+ complexed with ethylenediaminetetraacetic acid and a HSeO3 ion solution. X-ray diffraction analysis showed a zinc blende structure for the deposits, with a strong (111) preferred texture, and an average grain size of 425 delta. Electron probe microscope analysis showed near-stoichiometric deposits. Fourier transform infrared spectroscopy reflection absorption measurements suggest two bandgaps: 0.42 and 0.88 eV. DA - 2005-09 DB - ResearchSpace DP - CSIR KW - Electrochemical atomic layer epitaxy KW - HgSe thin films KW - Ethylenediaminetetraacetic acid KW - X-ray diffraction analysis KW - Stoichiometric deposits LK - https://researchspace.csir.co.za PY - 2005 SM - 0013-4651 T1 - Formation of HgSe thin films using electrochemical atomic Layer epitaxy TI - Formation of HgSe thin films using electrochemical atomic Layer epitaxy UR - http://hdl.handle.net/10204/1153 ER -