Kunert, HWMachatine, AGJNiyongabo, PGovender, MMwakikunga, Bonex W2013-06-032013-06-032012-08Kunert, H.W, Machatine, A.G.J, Niyongabo, P, Govender, M and Mwakikunga, B.W. 2012. Scattering tensors and optical transitions in Si and Ge. Physica Status Solidi C, vol. 9(10-11), pp 1974-19771862-6351http://onlinelibrary.wiley.com/doi/10.1002/pssc.201200068/pdfhttp://hdl.handle.net/10204/6769https://doi.org/10.1002/pssc.201200068Copyright: 2012. Wiley VCH. This is an ABSTRACT ONLY. The definitive version is published in Physica Status Solidi C, vol. 9(10-11), pp 1974-1977The selection rules (SR’s) for the Kronecker product (KP) of Si and Ge irreducible representations (irreps) are required to determine the intervalley scattering processes. The SR’s for transitions between the lowest conduction band minima at Γ, X and L high symmetry points and the highest maximum of the valence band (VB) in the Brillouin zone of Oh7 space group symmetry are determined. The elements of El-Ph scattering tensors are linear combinations of the Clebsch-Gordon coefficients (CGC’s). Here we have computed the coupling coefficients relevant to scattering tensors. Our theoretical results confirm the available experimental data. In this work, we focused on utilisation of group theory with regard to matrix elements of scattering tensors which are a linear combination of Clebsch-Gordon coefficients. The required phonon symmetries are determined by irreps contained in KP. We have calculated the U matrix for the LA phonon which diagonalizes the intervalley scattering between the Г2- valley and the four Lvalleys of the same star symmetry. We also have estimated an electron energy loss to X-valley acoustic phonon emission due to L-valleys electron scattering in a quasi-elastic process in agreement with available experimental data.enScattering tensorsSc.T’sSelection rulesClebsch-Gordan coefficientsSiGeKronecker productBrillouin zoneArticleKunert, H., Machatine, A., Niyongabo, P., Govender, M., & Mwakikunga, B. W. (2012). Scattering tensors and optical transitions in Si and Ge. http://hdl.handle.net/10204/6769Kunert, HW, AGJ Machatine, P Niyongabo, M Govender, and Bonex W Mwakikunga "Scattering tensors and optical transitions in Si and Ge." (2012) http://hdl.handle.net/10204/6769Kunert H, Machatine A, Niyongabo P, Govender M, Mwakikunga BW. Scattering tensors and optical transitions in Si and Ge. 2012; http://hdl.handle.net/10204/6769.TY - Article AU - Kunert, HW AU - Machatine, AGJ AU - Niyongabo, P AU - Govender, M AU - Mwakikunga, Bonex W AB - The selection rules (SR’s) for the Kronecker product (KP) of Si and Ge irreducible representations (irreps) are required to determine the intervalley scattering processes. The SR’s for transitions between the lowest conduction band minima at Γ, X and L high symmetry points and the highest maximum of the valence band (VB) in the Brillouin zone of Oh7 space group symmetry are determined. The elements of El-Ph scattering tensors are linear combinations of the Clebsch-Gordon coefficients (CGC’s). Here we have computed the coupling coefficients relevant to scattering tensors. Our theoretical results confirm the available experimental data. In this work, we focused on utilisation of group theory with regard to matrix elements of scattering tensors which are a linear combination of Clebsch-Gordon coefficients. The required phonon symmetries are determined by irreps contained in KP. We have calculated the U matrix for the LA phonon which diagonalizes the intervalley scattering between the Г2- valley and the four Lvalleys of the same star symmetry. We also have estimated an electron energy loss to X-valley acoustic phonon emission due to L-valleys electron scattering in a quasi-elastic process in agreement with available experimental data. DA - 2012-08 DB - ResearchSpace DP - CSIR KW - Scattering tensors KW - Sc.T’s KW - Selection rules KW - Clebsch-Gordan coefficients KW - Si KW - Ge KW - Kronecker product KW - Brillouin zone LK - https://researchspace.csir.co.za PY - 2012 SM - 1862-6351 T1 - Scattering tensors and optical transitions in Si and Ge TI - Scattering tensors and optical transitions in Si and Ge UR - http://hdl.handle.net/10204/6769 ER -