Baisitse, TRBotha, JREngelbrecht, JA2009-02-092009-02-092006-07Baisitse, TR, Botha, JR and Engelbrecht, JA. 2006. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates. 51st Annual Conference of the SAIP, University of the Western Cape, South Africa, 3-7 July 2006, pp 14http://hdl.handle.net/10204/29791st Annual Conference of the SAIP, University of the Western Cape, South Africa, 3-7 July 2006Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various sensing applications; InAsSb is ideally suited for mid-infrared applications, since its band gap spans the wavelength range from 3 to 12 µm; It can be combined epitaxially with GaSb for backside-illuminated detectorsenSemiconducting materialsInfrared detectorsEpilayersTernary alloys51st Annual Conference of the SAIPConference PresentationBaisitse, T., Botha, J., & Engelbrecht, J. (2006). Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates. http://hdl.handle.net/10204/2979Baisitse, TR, JR Botha, and JA Engelbrecht. "Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates." (2006): http://hdl.handle.net/10204/2979Baisitse T, Botha J, Engelbrecht J, Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates; 2006. http://hdl.handle.net/10204/2979 .TY - Conference Presentation AU - Baisitse, TR AU - Botha, JR AU - Engelbrecht, JA AB - Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various sensing applications; InAsSb is ideally suited for mid-infrared applications, since its band gap spans the wavelength range from 3 to 12 µm; It can be combined epitaxially with GaSb for backside-illuminated detectors DA - 2006-07 DB - ResearchSpace DP - CSIR KW - Semiconducting materials KW - Infrared detectors KW - Epilayers KW - Ternary alloys KW - 51st Annual Conference of the SAIP LK - https://researchspace.csir.co.za PY - 2006 T1 - Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates TI - Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates UR - http://hdl.handle.net/10204/2979 ER -