Arendse, CJKnoesen, DBritton, DT2007-06-292007-06-292006-04Arendse, CJ, Knoesen, D and Britton, DT. Thermal stability of hot-wire deposited amorphous silicon. Thin Solid Films, Vol. 501(1-2), pp 92-940040-6090http://hdl.handle.net/10204/755Copyright: 2005 Elsevier B.VThe material properties of hydrogenated amorphous silicon (a-Si:H) have been known to change when exposed to elevated temperatures. In this work the authors report on the thermal stability of the structural disorder, hydrogen content and defect structure of hot-wire deposited a-Si:H when exposed to temperatures in excess of 100 -C. Prior to thermal hydrogen diffusion a change in the defect structure is observed, caused by the creation of low concentrations of microvoids. There is evidence of vacancy clustering at 400 -C, caused by the alignment of unterminated Si dangling-bonds that consequently results in an increase in the defect size, concentration or both. Raman scattering shows evidence that no crystallization is induced at 400 -C and that the structural disorder increases upon annealing.enSiliconChemical vapour depositionCrystallizationDiffusionArticleArendse, C., Knoesen, D., & Britton, D. (2006). Thermal stability of hot-wire deposited amorphous silicon. http://hdl.handle.net/10204/755Arendse, CJ, D Knoesen, and DT Britton "Thermal stability of hot-wire deposited amorphous silicon." (2006) http://hdl.handle.net/10204/755Arendse C, Knoesen D, Britton D. Thermal stability of hot-wire deposited amorphous silicon. 2006; http://hdl.handle.net/10204/755.TY - Article AU - Arendse, CJ AU - Knoesen, D AU - Britton, DT AB - The material properties of hydrogenated amorphous silicon (a-Si:H) have been known to change when exposed to elevated temperatures. In this work the authors report on the thermal stability of the structural disorder, hydrogen content and defect structure of hot-wire deposited a-Si:H when exposed to temperatures in excess of 100 -C. Prior to thermal hydrogen diffusion a change in the defect structure is observed, caused by the creation of low concentrations of microvoids. There is evidence of vacancy clustering at 400 -C, caused by the alignment of unterminated Si dangling-bonds that consequently results in an increase in the defect size, concentration or both. Raman scattering shows evidence that no crystallization is induced at 400 -C and that the structural disorder increases upon annealing. DA - 2006-04 DB - ResearchSpace DP - CSIR KW - Silicon KW - Chemical vapour deposition KW - Crystallization KW - Diffusion LK - https://researchspace.csir.co.za PY - 2006 SM - 0040-6090 T1 - Thermal stability of hot-wire deposited amorphous silicon TI - Thermal stability of hot-wire deposited amorphous silicon UR - http://hdl.handle.net/10204/755 ER -