Krug, TBotha, LShamba, PBaisitse, TRVenter, AEngelbrecht, JAABotha, JR2007-06-292007-06-292006Krug, T, et al. 2006. Electrical properties of undoped and doped MOVPE-grown InAsSb. Journal of Crystal Growth, vol. 298, pp 163-1670022-0248http://hdl.handle.net/10204/828Copyright: 2006 Elsevier Science BVStrong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at very low doping concentrations. A two-layer model is presented which can potentially be used to extract the bulk layer properties of a semiconductor epilayer. We here apply this model to two different materials, InAs and InAsSb, and extract their transport properties.enHall measurementsSurface morphologyAnalysis methodsTwo-layer modelsArticleKrug, T., Botha, L., Shamba, P., Baisitse, T., Venter, A., Engelbrecht, J., & Botha, J. (2006). Electrical properties of undoped and doped MOVPE-grown InAsSb. http://hdl.handle.net/10204/828Krug, T, L Botha, P Shamba, TR Baisitse, A Venter, JAA Engelbrecht, and JR Botha "Electrical properties of undoped and doped MOVPE-grown InAsSb." (2006) http://hdl.handle.net/10204/828Krug T, Botha L, Shamba P, Baisitse T, Venter A, Engelbrecht J, et al. Electrical properties of undoped and doped MOVPE-grown InAsSb. 2006; http://hdl.handle.net/10204/828.TY - Article AU - Krug, T AU - Botha, L AU - Shamba, P AU - Baisitse, TR AU - Venter, A AU - Engelbrecht, JAA AU - Botha, JR AB - Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at very low doping concentrations. A two-layer model is presented which can potentially be used to extract the bulk layer properties of a semiconductor epilayer. We here apply this model to two different materials, InAs and InAsSb, and extract their transport properties. DA - 2006 DB - ResearchSpace DP - CSIR KW - Hall measurements KW - Surface morphology KW - Analysis methods KW - Two-layer models LK - https://researchspace.csir.co.za PY - 2006 SM - 0022-0248 T1 - Electrical properties of undoped and doped MOVPE-grown InAsSb TI - Electrical properties of undoped and doped MOVPE-grown InAsSb UR - http://hdl.handle.net/10204/828 ER -