Linganiso, ECRodrigues, RMhlanga, SDMwakikunga, Bonex WCoville, NJHümmelgen, IA2015-08-192015-08-192013-12Linganiso, E.C, Rodrigues, R, Mhlanga, S.D, Mwakikunga, B.W, Coville, N.J and Hümmelgen, I.A. 2013. GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device. Materials Chemistry and Physics, vol. 143(1), pp 367-3720254-0584http://ac.els-cdn.com/S0254058413006792/1-s2.0-S0254058413006792-main.pdf?_tid=f2e80e84-3043-11e5-ac67-00000aacb361&acdnat=1437550590_e1332ccb1c863d51c58751ed3dc07472http://hdl.handle.net/10204/8100https://www.sciencedirect.com/science/article/pii/S0254058413006792https://doi.org/10.1016/j.matchemphys.2013.09.011Copyright: 2013 Elsevier. Due to copyright restrictions, the attached PDF file only contains the abstract of the full text item. For access to the full text item, please consult the publisher's website. The definitive version of the work is published in Materials Chemistry and Physics, vol. 143(1), pp 367-372The wide band-gap semiconductor material gallium nitride was synthesized using a one step microwave-assisted solution phase technique. The synthesized GaN nanocrystals showed an intense ultraviolet-blue emission typical of GaN materials. Hydrostatic pressure sensors were fabricated using a GaN/polyvinyl alcohol (PVA) composite film deposited onto an interdigitated electrode and studied by measuring the change in alternating current conductance of the devices at varied applied pressures. Three different GaN concentrations of 29, 50 and 67% were used. A very high sensitivity in the range 100e200 kPa was observed for these devices. The composite devices demonstrated both response and recovery times of less than 16 s.enNanostructuresSemiconductorsComposite materialsChemical synthesisElectrical characterizationArticleLinganiso, E., Rodrigues, R., Mhlanga, S., Mwakikunga, B. W., Coville, N., & Hümmelgen, I. (2013). GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device. http://hdl.handle.net/10204/8100Linganiso, EC, R Rodrigues, SD Mhlanga, Bonex W Mwakikunga, NJ Coville, and IA Hümmelgen "GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device." (2013) http://hdl.handle.net/10204/8100Linganiso E, Rodrigues R, Mhlanga S, Mwakikunga BW, Coville N, Hümmelgen I. GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device. 2013; http://hdl.handle.net/10204/8100.TY - Article AU - Linganiso, EC AU - Rodrigues, R AU - Mhlanga, SD AU - Mwakikunga, Bonex W AU - Coville, NJ AU - Hümmelgen, IA AB - The wide band-gap semiconductor material gallium nitride was synthesized using a one step microwave-assisted solution phase technique. The synthesized GaN nanocrystals showed an intense ultraviolet-blue emission typical of GaN materials. Hydrostatic pressure sensors were fabricated using a GaN/polyvinyl alcohol (PVA) composite film deposited onto an interdigitated electrode and studied by measuring the change in alternating current conductance of the devices at varied applied pressures. Three different GaN concentrations of 29, 50 and 67% were used. A very high sensitivity in the range 100e200 kPa was observed for these devices. The composite devices demonstrated both response and recovery times of less than 16 s. DA - 2013-12 DB - ResearchSpace DP - CSIR KW - Nanostructures KW - Semiconductors KW - Composite materials KW - Chemical synthesis KW - Electrical characterization LK - https://researchspace.csir.co.za PY - 2013 SM - 0254-0584 T1 - GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device TI - GaN nanostructures-poly(vinyl alcohol) composite based hydrostatic pressure sensor device UR - http://hdl.handle.net/10204/8100 ER -