Baisitse, TRForbes, AKatumba, GBotha, JREngelbrecht, JAA2008-01-312008-01-312008Baisitse, TR et al. 2008. Characterisation of InAs-based epilayers by FTIR spectroscopy. Physica Status Solidi C Conferences, Vol. 5(2), pp 573-5761610-1634http://hdl.handle.net/10204/1998Copyright: 2008 John Wiley & Sons LtdIn this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements.enMOVPEMetal organic vapour phase epitaxialInAsGaAsInfrared reflectance spectroscopyCharacterisation of InAs-based epilayers by FTIR spectroscopyArticleBaisitse, T., Forbes, A., Katumba, G., Botha, J., & Engelbrecht, J. (2008). Characterisation of InAs-based epilayers by FTIR spectroscopy. http://hdl.handle.net/10204/1998Baisitse, TR, A Forbes, G Katumba, JR Botha, and JAA Engelbrecht "Characterisation of InAs-based epilayers by FTIR spectroscopy." (2008) http://hdl.handle.net/10204/1998Baisitse T, Forbes A, Katumba G, Botha J, Engelbrecht J. Characterisation of InAs-based epilayers by FTIR spectroscopy. 2008; http://hdl.handle.net/10204/1998.TY - Article AU - Baisitse, TR AU - Forbes, A AU - Katumba, G AU - Botha, JR AU - Engelbrecht, JAA AB - In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements. DA - 2008 DB - ResearchSpace DP - CSIR KW - MOVPE KW - Metal organic vapour phase epitaxial KW - InAs KW - GaAs KW - Infrared reflectance spectroscopy LK - https://researchspace.csir.co.za PY - 2008 SM - 1610-1634 T1 - Characterisation of InAs-based epilayers by FTIR spectroscopy TI - Characterisation of InAs-based epilayers by FTIR spectroscopy UR - http://hdl.handle.net/10204/1998 ER -