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dc.contributor.author Chawanda, A
dc.contributor.author Roro, Kittessa T
dc.contributor.author Auret, FD
dc.contributor.author Mtangi, W
dc.contributor.author Nyamhere, C
dc.contributor.author Nel, J
dc.contributor.author Leach, L
dc.date.accessioned 2012-02-17T13:17:06Z
dc.date.available 2012-02-17T13:17:06Z
dc.date.issued 2011-05
dc.identifier.citation Chawanda, A, Roro, KT, Auret, FD et al. 2010. Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111). Materials Science in Semiconductor Processing, vol. 13(5-6), pp 371-375 en_US
dc.identifier.issn 1369-8001
dc.identifier.uri http://www.sciencedirect.com/science/article/pii/S1369800111000928
dc.identifier.uri http://hdl.handle.net/10204/5583
dc.description Copyright: 2011 Elsevier. This is the post-print version of the work. The definitive version is published in Materials Science in Semiconductor Processing, vol. 13(5-6), pp 371-375 en_US
dc.description.abstract The authors have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2.5×1015 cm-3. The Pd Schottky contacts were fabricated by vacuum resistive evaporation. The electrical analysis of the contacts was investigated by means of current–voltage (I–V) and capacitance–voltage (C–V) measurements at a temperature of 296 K. The effective barrier heights from I–V characteristics varied from 0.492 to 0.550 eV, the ideality factor n varied from 1.140 to 1.950, and from reverse bias capacitance–voltage (C-2–V) characteristics the barrier height varied from 0.427 to 0.509 eV. The lateral homogenous barrier height value of 0.558 eV for the contacts was obtained from the linear relationship between experimental barrier heights and ideality factors. Furthermore the experimental barrier height distribution obtained from I–V and (C-2-V) characteristics were fitted by Gaussian distribution function, and their mean values were found to be 0.529 and 0.463 eV, respectively. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.ispartofseries Workflow;7335
dc.subject Barrier height en_US
dc.subject Germanium en_US
dc.subject Metal-semiconductor en_US
dc.subject Ideality factor en_US
dc.subject Inhomogeneity en_US
dc.title Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111) en_US
dc.type Article en_US


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