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dc.contributor.author Baisitse, TR
dc.contributor.author Botha, JR
dc.contributor.author Engelbrecht, JA
dc.date.accessioned 2009-02-09T14:41:29Z
dc.date.available 2009-02-09T14:41:29Z
dc.date.issued 2006-07
dc.identifier.citation Baisitse, TR, Botha, JR and Engelbrecht, JA. 2006. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates. 51st Annual Conference of the SAIP, University of the Western Cape, South Africa, 3-7 July 2006, pp 14 en
dc.identifier.uri http://hdl.handle.net/10204/2979
dc.description 1st Annual Conference of the SAIP, University of the Western Cape, South Africa, 3-7 July 2006 en
dc.description.abstract Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various sensing applications; InAsSb is ideally suited for mid-infrared applications, since its band gap spans the wavelength range from 3 to 12 µm; It can be combined epitaxially with GaSb for backside-illuminated detectors en
dc.language.iso en en
dc.subject Semiconducting materials en
dc.subject Infrared detectors en
dc.subject Epilayers en
dc.subject Ternary alloys en
dc.subject 51st Annual Conference of the SAIP en
dc.title Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates en
dc.type Presentation en


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