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Show simple item record Mathe, Mahlanyane K Cox, SM Venkatasamy, V Happek, U Stickney, JL 2007-08-23T06:54:12Z 2007-08-23T06:54:12Z 2005-09
dc.identifier.citation Mathe, MK et al. 2005. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. Journal of the Electrochemical society, Vol 152(11), pp C751-C755 en
dc.identifier.issn 0013-4651
dc.description Copyright: 2005 Electrochemical Society en
dc.description.abstract The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation of an atomic layer of an element, under controlled potential. HgSe thin films were formed on gold substrates using two reactant solutions: a solution of Hg2+ complexed with ethylenediaminetetraacetic acid and a HSeO3 ion solution. X-ray diffraction analysis showed a zinc blende structure for the deposits, with a strong (111) preferred texture, and an average grain size of 425 delta. Electron probe microscope analysis showed near-stoichiometric deposits. Fourier transform infrared spectroscopy reflection absorption measurements suggest two bandgaps: 0.42 and 0.88 eV. en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.subject Electrochemical atomic layer epitaxy en
dc.subject HgSe thin films en
dc.subject Ethylenediaminetetraacetic acid en
dc.subject X-ray diffraction analysis en
dc.subject Stoichiometric deposits en
dc.title Formation of HgSe thin films using electrochemical atomic Layer epitaxy en
dc.type Article en

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