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A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance

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dc.contributor.author Reddy, Reeshen
dc.contributor.author Sinha, S
dc.date.accessioned 2016-12-08T07:42:35Z
dc.date.available 2016-12-08T07:42:35Z
dc.date.issued 2015-04
dc.identifier.citation Reddy, R. and Sinha, S. 2015. A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance. Microelectronics Journal, 46(4), 310-319 en_US
dc.identifier.issn 0026-2692
dc.identifier.uri http://www.sciencedirect.com/science/article/pii/S0026269215000257
dc.identifier.uri http://hdl.handle.net/10204/8886
dc.description Copyright: 2016 Elsevier. Due to copyright restrictions, the attached PDF file only contains the abstract of the full text item. For access to the full text item, please consult the publisher's website. The definitive version of the work is published in Microelectronics Journal, 46(4),pp 310-319 en_US
dc.description.abstract This paper presents a six-bit current-steering digital-to-analogue converter (DAC), which optimises the spurious free dynamic range (SFDR) performance of high-speed binary weighted architectures by lowering current switch distortion and reducing the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-channel metal-oxide semiconductor (NMOS) cascode and NMOS current source to overcome distortion by specifically enhancing the SFDR for high-speed DACs. The DAC is implemented using silicon¿germanium (SiGe) BiCMOS 130 nm technology and achieves a better than 21.96 dBc SFDR across the Nyquist band for a sampling rate of 500 MS/s with a core size of 0.1 mm2 and dissipates just 4 mW compared to other BiCMOS DACs that achieve similar SFDR performance with higher output voltages, resulting in a much larger power dissipation. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.ispartofseries Wokflow;16311
dc.subject BiCMOS integrated circuits en_US
dc.subject Dynamic range en_US
dc.subject Analogue-digital integrated circuits en_US
dc.subject Mixed analogue digital integrated circuits en_US
dc.subject Wideband en_US
dc.subject Digital-to-analogue converter en_US
dc.subject DAC en_US
dc.subject Spurious free dynamic range en_US
dc.subject SFDR en_US
dc.subject Negative-channel metal-oxide semiconductor en_US
dc.subject NMOS en_US
dc.title A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance en_US
dc.type Article en_US
dc.identifier.apacitation Reddy, R., & Sinha, S. (2015). A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance. http://hdl.handle.net/10204/8886 en_ZA
dc.identifier.chicagocitation Reddy, Reeshen, and S Sinha "A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance." (2015) http://hdl.handle.net/10204/8886 en_ZA
dc.identifier.vancouvercitation Reddy R, Sinha S. A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance. 2015; http://hdl.handle.net/10204/8886. en_ZA
dc.identifier.ris TY - Article AU - Reddy, Reeshen AU - Sinha, S AB - This paper presents a six-bit current-steering digital-to-analogue converter (DAC), which optimises the spurious free dynamic range (SFDR) performance of high-speed binary weighted architectures by lowering current switch distortion and reducing the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-channel metal-oxide semiconductor (NMOS) cascode and NMOS current source to overcome distortion by specifically enhancing the SFDR for high-speed DACs. The DAC is implemented using silicon¿germanium (SiGe) BiCMOS 130 nm technology and achieves a better than 21.96 dBc SFDR across the Nyquist band for a sampling rate of 500 MS/s with a core size of 0.1 mm2 and dissipates just 4 mW compared to other BiCMOS DACs that achieve similar SFDR performance with higher output voltages, resulting in a much larger power dissipation. DA - 2015-04 DB - ResearchSpace DP - CSIR KW - BiCMOS integrated circuits KW - Dynamic range KW - Analogue-digital integrated circuits KW - Mixed analogue digital integrated circuits KW - Wideband KW - Digital-to-analogue converter KW - DAC KW - Spurious free dynamic range KW - SFDR KW - Negative-channel metal-oxide semiconductor KW - NMOS LK - https://researchspace.csir.co.za PY - 2015 SM - 0026-2692 T1 - A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance TI - A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance UR - http://hdl.handle.net/10204/8886 ER - en_ZA


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