Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic voltammetry (CV). Then, based on CVs results, CZTS films were grownemploying EC-ALD deposition cycles using the sequence Au/S/Cu/S/Zn/S/Sn/S to form the desired qua-ternary compound. In parallel, conventional one-step electrodeposition was carried out at -0.85 V vs.Ag/AgCl over 1 hour. A thermal treatment in sulfur vapor was also investigated in an attempt to optimizethe stoichiometry. The crystal structure of the films was characterized by XRD and micro Raman spectroscopy, while themorphology, thickness, topography and elemental composition were investigated using FIB-SEM and EDS.
Reference:
Valdes, M, Modibedi, M, Mathe, M, Hillie, T and Vazquez, M. 2014. Electrodeposited Cu2ZnSnS4 thin films. Electrochimica Acta, vol. 128, pp 393-399
Valdes, M., Modibedi, R. M., Mathe, M. K., Hillie, T., & Vazquez, M. (2014). Electrodeposited Cu2ZnSnS4 thin films. http://hdl.handle.net/10204/7536
Valdes, M, Remegia M Modibedi, Mahlanyane K Mathe, T Hillie, and M Vazquez "Electrodeposited Cu2ZnSnS4 thin films." (2014) http://hdl.handle.net/10204/7536
Valdes M, Modibedi RM, Mathe MK, Hillie T, Vazquez M. Electrodeposited Cu2ZnSnS4 thin films. 2014; http://hdl.handle.net/10204/7536.