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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/3526

Title: Effect of precursor concentration, temperature and capping group on the morphology of CdS nanoparticles
Authors: Moloto, N
Revaprasadu, N
Musetha, PL
Moloto, MJ
Keywords: Tetramethylthiuram dsulphide
CdS nanocrystals
Pecursor concentration
Capping group
Tetramethylthiuram monosulfide
Issue Date: 2008
Publisher: American Scientific Publishers
Citation: Moloto, N, Revaprasadu, N, Musetha, PL and Moloto, MJ. 2008. Effect of precursor concentration, temperature and capping group on the morphology of CdS nanoparticles. Journal of Nanoscience and Nanotechnology, Vol. 9 (2008), pp 1-23
Abstract: A novel ligand to the synthesis of nanoparticles has been employed in this study. A Tetramethylthiuram disulphide cadmium complex (abundant in sulphur atoms) was used as a single-source precursor for the synthesis of CdS nanoparticles. The CdS nanoparticles were synthesized under various conditions and were characterized using UV/Vis, PL, XRD and TEM. The influence of the precursor concentration, temperature and capping environment as factors affecting the morphology and size of the nanoparticles was investigated. Researchers observed that with an increase in precursor concentration, there was an increase in particle sizes and the morphology evolved from spherical to rod-shaped nanoparticles. An increase in temperature showed only evidence of increasing the particle sizes whilst the capping environment had a profound influence on the morphology of the nanoparticles. The work reported in this paper demonstrate that factors such as temperature, concentration and the capping group affects the growth of nanoparticles either in size and/or shape.
Description: This is the author's version of the work. It is posted here by permission of American Scientific Publishers for your personal use. Not for redistribution
URI: http://hdl.handle.net/10204/3526
ISSN: 1533-4880
Appears in Collections:National Centre for nano-structured materials
General science, engineering & technology

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