Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various sensing applications; InAsSb is ideally suited for mid-infrared applications, since its band gap spans the wavelength range from 3 to 12 µm; It can be combined epitaxially with GaSb for backside-illuminated detectors
Reference:
Baisitse, TR, Botha, JR and Engelbrecht, JA. 2006. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates. 51st Annual Conference of the SAIP, University of the Western Cape, South Africa, 3-7 July 2006, pp 14
Baisitse, T., Botha, J., & Engelbrecht, J. (2006). Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates. http://hdl.handle.net/10204/2979
Baisitse, TR, JR Botha, and JA Engelbrecht. "Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates." (2006): http://hdl.handle.net/10204/2979
Baisitse T, Botha J, Engelbrecht J, Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates; 2006. http://hdl.handle.net/10204/2979 .
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