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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/1998

Title: Characterisation of InAs-based epilayers by FTIR spectroscopy
Authors: Baisitse, TR
Forbes, A
Katumba, G
Botha, JR
Engelbrecht, JAA
Keywords: MOVPE
Metal organic vapour phase epitaxial
InAs
GaAs
Infrared reflectance spectroscopy
Issue Date: 2008
Publisher: John Wiley & Sons Ltd
Citation: Baisitse, TR et al. 2008. Characterisation of InAs-based epilayers by FTIR spectroscopy. Physica Status Solidi C Conferences, Vol. 5(2), pp 573-576
Abstract: In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements.
Description: Copyright: 2008 John Wiley & Sons Ltd
URI: http://hdl.handle.net/10204/1998
ISSN: 1610-1634
Appears in Collections:Laser physics and technology
General science, engineering & technology

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