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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10204/1998
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| Title: | Characterisation of InAs-based epilayers by FTIR spectroscopy |
| Authors: | Baisitse, TR
Forbes, A
Katumba, G
Botha, JR
Engelbrecht, JAA |
| Keywords: | MOVPE
Metal organic vapour phase epitaxial
InAs
GaAs
Infrared reflectance spectroscopy |
| Issue Date: | 2008 |
| Publisher: | John Wiley & Sons Ltd |
| Citation: | Baisitse, TR et al. 2008. Characterisation of InAs-based epilayers by FTIR spectroscopy. Physica Status Solidi C Conferences, Vol. 5(2), pp 573-576 |
| Abstract: | In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements. |
| Description: | Copyright: 2008 John Wiley & Sons Ltd |
| URI: | http://hdl.handle.net/10204/1998 |
| ISSN: | 1610-1634 |
| Appears in Collections: | Laser physics and technology
General science, engineering & technology
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