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Please use this identifier to cite or link to this item: http://hdl.handle.net/10204/1153

Title: Formation of HgSe thin films using electrochemical atomic Layer epitaxy
Authors: Mathe, MK
Cox, SM
Venkatasamy, V
Happek, U
Stickney, JL
Keywords: Electrochemical atomic layer epitaxy
HgSe thin films
Ethylenediaminetetraacetic acid
X-ray diffraction analysis
Stoichiometric deposits
Issue Date: Sep-2005
Publisher: Electrochemical Society
Citation: Mathe, MK et al. 2005. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. Journal of the Electrochemical society, Vol 152(11), pp C751-C755
Abstract: The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation of an atomic layer of an element, under controlled potential. HgSe thin films were formed on gold substrates using two reactant solutions: a solution of Hg2+ complexed with ethylenediaminetetraacetic acid and a HSeO3 ion solution. X-ray diffraction analysis showed a zinc blende structure for the deposits, with a strong (111) preferred texture, and an average grain size of 425 delta. Electron probe microscope analysis showed near-stoichiometric deposits. Fourier transform infrared spectroscopy reflection absorption measurements suggest two bandgaps: 0.42 and 0.88 eV.
Description: Copyright: 2005 Electrochemical Society
URI: http://hdl.handle.net/10204/1153
ISSN: 0013-4651
Appears in Collections:General science, engineering & technology
Agroprocessing and chemical technology

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