Author:Venkatasamy, V; Jayaraju, N; Cox, SM; Thambidurai, C; Mathe, Mahlanyane K; Stickney, LJDate:Apr 2006This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth ...Read more
Author:Mathe, Mahlanyane K; Cox, SM; Venkatasamy, V; Happek, U; Stickney, JLDate:Sep 2005The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the ...Read more