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Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

Author: Chawanda, A ; Roro, Kittessa T ; Auret, FD ; Mtangi, W ; Nyamhere, C ; Nel, J ; Leach, L Date: May 2011 The authors have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about ... Read more

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Browsing by Subject "Metal-semiconductor"

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