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Browsing by Author "Gouws, GJ"

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  • Gouws, GJ; Muller, RJ; Bowden, RS (Elsevier Science BV, 1993-05)
    The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of (100) GaAs/ (lll) CdTe was found ...
  • Parish, G; Musca, CA; Siliquini, JF; Antoszewki, J; Dell, Jm; Nener, BD; Faraone, L; Gouws, GJ (IEEE-Institute of Electrical and Electronics Engineers, 1997-07)
    A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which ...